 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PolarTM Power MOSFET HiperFETTM N-Channel Enhancement Mode Avalanche Rated IXFA12N50P IXFP12N50P VDSS ID25 RDS(on) = 500V = 12A 500m Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Ratings 500 500 30 40 12 30 12 600 20 200 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. g g TO-263 (IXFA) G S (TAB) TO-220 (IXFP) G DS (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6mm (0.062) from case for 10s Plastic body for 10s Mounting torque TO-263 TO-220 (TO-220) 300 260 1.13 / 10 2.5 3.0 Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250A VDS = VGS, ID = 1mA VGS = 30V, VDS = 0V VDS = VDSS VGS = 0V TJ = 125C Characteristic Values Min. Typ. Max. 500 3.0 5.5 V V 100 nA 5 250 A A VGS = 10V, ID = 0.5 * ID25, Note 1 500 m (c) 2008 IXYS CORPORATION, All rights reserved DS99436F(04/08) IXFA12N50P IXFP12N50P Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VDS = 20V, ID = 0.5 * ID25, Note 1 VGS = 0V, VDS = 25V, f = 1MHz Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 50 (External) Characteristic Values Min. Typ. Max. 7.5 13 1830 182 16 22 27 65 20 29 11 10 0.50 S pF pF pF ns ns ns ns nC nC nC 0.62 C/W C/W Pins: 1 - Gate 2 - Drain TO-220 (IXFP) Outline VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 (TO-220) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0V Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 12 A 48 A 1.5 V 2.8 18.2 300 ns C A TO-263 (IXFA) Outline Repetitive, pulse width limited by TJM IF = IS, VGS = 0V, Note 1 IF = 6A, -di/dt = 150A/s, VR = 100V, VGS = 0V Note 1: Pulse test, t 300 s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA12N50P IXFP12N50P Fig. 1. Output Characteristics @ 25C 12 VGS = 10V 10 8 6 4 2 6V 0 0 1 2 3 4 5 6 7 30 27 24 21 7V VGS = 10V 8V Fig. 2. Extended Output Characteristics @ 25C I D - Amperes I D - Amperes 18 15 12 9 6 3 0 0 3 6 9 12 15 18 21 24 27 30 7V 6V V D S - Volts Fig. 3. Output Characteristics @ 125C 12 VGS = 10V 10 8 6 4 2 5V 0 0 2 4 6 8 10 12 6V 7V 2.6 2.4 2.2 VGS = 1 0V V D S - Volts Fig. 4. RDS(on) Normalized to I D = 6A Value vs. Junction Temperature R D S ( o n ) - Normalized 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 ID = 12A ID = 6A I D - Amperes VD S - Volts Fig. 5. RDS(on) Normalized to I D = 6A Value vs. Drain Current 3.4 3.0 VGS = 1 0V TJ = 125 C 2.6 14 12 10 TJ - Degrees Centigrade Fig. 6. Drain Curre nt v s. Case Te mpe rature R D S ( o n ) - Normalized I D - Amperes TJ = 25 C 0 3 6 9 12 15 18 21 24 27 30 2.2 1.8 1.4 1.0 0.6 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 I D - Amperes T C - Degrees Centigrade (c) 2008 IXYS CORPORATION, All rights reserved IXFA12N50P IXFP12N50P Fig. 7. Input Admittance 20 18 16 27 24 21 Fig. 8. Transconductance g f s - Siemens I D - Amperes 14 12 10 8 6 4 2 0 4.5 5.0 5.5 6.0 S 18 15 12 9 6 3 0 TJ = - 40C 25C 125C TJ = 125 C 25C - 40C 6.5 7.0 7.5 0 2 4 6 8 10 12 14 16 18 20 VG - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 35 30 25 10 9 8 7 Fig. 10. Gate Charge VDS = 250V ID = 6A IG = 10m A I S - Amperes VG S - Volts TJ = 25C 20 15 TJ = 125 C 10 5 0 0.4 0.5 0.6 0.7 D 6 5 4 3 2 1 0 0.8 0.9 1.0 0 3 6 9 12 G 15 18 21 24 27 30 VS - Volts Q - nanoCoulombs Fig. 11. Capacitance 10000 100 Fig. 12. Forward-Bias Safe Operating Area f=1 MHz Capacitance - picoFarads Ciss 1000 Coss 100 RDS(on) Limit TJ = 150C TC = 25C I D - Amperes 10 25s 100s Crss DC 10 0 5 10 15 20 25 30 35 40 1 10 100 1m s 10ms 1000 VD S - Volts V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. IXFA12N50P IXFP12N50P Fig. 13. Maximum Transient Thermal Impedance 1.00 Z ( t h ) J C - C / W 0.10 0.01 0.01 0.1 1 10 100 1000 Pulse Width - milliseconds (c) 2008 IXYS CORPORATION, All rights reserved IXYS REF: T_12N50P(4J)4-14-08-D |
Price & Availability of IXFP12N50P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |